Details

Patent
Patent Number
US5366909
Title
Method for fabricating thin film transistor
Assignee
lg semicon co., ltd.
patentAbstract
A method for fabricating a thin film transistor capable of increasing an ON/OFF current ratio and decreasing a consumption of electric power. The method includes the steps of sequentially depositing an insulating film and a first, high concentration p typ
publisherAbstract
Rating
3.4
Tier
3

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