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Patent
Patent Number
US5952690
Title
Thin film transistor and fabrication method of the same
Assignee
lg semicon co., ltd.
patentAbstract
A thin film transistor is provided on a insulative substrate and includes a polysilicon body film having a ridge portion formed on a predetermined portion of the substrate. A first gate insulation film, a main gate and a cap oxide film are successively fo
publisherAbstract
Rating
3.4
Tier
3
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