Details

Patent
Patent Number
US7759694
Title
Nitride semiconductor light-emitting device
Assignee
sharp kabushiki kaisha
patentAbstract
In a nitride semiconductor light-emitting device having an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, the active layer has a multiple quantum well structure including a plurality of InxGa1-xN (0&lt
publisherAbstract
Rating
3.4
Tier
3

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