Details

Patent
Patent Number
US6737669
Title
Semiconductor light-emitting device
Assignee
sharp kabushiki kaisha
patentAbstract
A semiconductor light-emitting device has a lower clad layer, an active layer, a p-type GaP layer and an upper clad layer, which are successively formed on an n-type GaAs substrate. The p-type GaP layer has a higher energy position by 0.10 eV than the upp
publisherAbstract
Rating
3.4
Tier
3

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